Luminescence and Internal Quantum Efficiency of Deep UV Light Emitting Diodes
Romer F, Witzigmann B (2020)
Publication Type: Conference contribution
Publication year: 2020
Publisher: IEEE Computer Society
Book Volume: 2020-September
Pages Range: 57-58
Conference Proceedings Title: Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Event location: Turin
ISBN: 9781728160863
DOI: 10.1109/NUSOD49422.2020.9217731
Abstract
Deep ultraviolet (DUV) light emitting diodes (LED) made of Aluminium Gallium Nitride (AlGaN) are increasingly considered as light sources for medical as well as material processing applications. Recent research on AlGaN DUV LEDs focuses on the enhancement of the efficiency. The efficiency of AlGaN LEDs is limited by a low hole injection efficiency and TM-polarized emission requiring a careful design. In this context we are demonstrating the physics based modelling of AlGaN DUV LEDs by means of a self consistent simulation approach. The simulation model is validated and calibrated comparing experiment and simulation. We demonstrate that electron leakage presents a major contribution to the internal loss and analyse the impact of the active region design.
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Germany (DE)How to cite
APA:
Romer, F., & Witzigmann, B. (2020). Luminescence and Internal Quantum Efficiency of Deep UV Light Emitting Diodes. In Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD (pp. 57-58). Turin, IT: IEEE Computer Society.
MLA:
Romer, Friedhard, and Bernd Witzigmann. "Luminescence and Internal Quantum Efficiency of Deep UV Light Emitting Diodes." Proceedings of the 2020 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2020, Turin IEEE Computer Society, 2020. 57-58.
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