n-type Ge/Si antennas for THz sensing

Chavarin CA, Hardt E, Gruessing S, Skibitzki O, Costina , Spirito D, Seifert W, Klesse W, Manganelli CL, You C, Flesch J, Piehler J, Missori M, Baldassarre L, Witzigmann B, Capellini G (2021)

Publication Type: Journal article

Publication year: 2021

Journal

Optics Express Optical Society of America

Book Volume: 29

Pages Range: 7680-7689

Journal Issue: 5

DOI: 10.1364/OE.418382

Abstract

Ge-on-Si plasmonics holds the promise for compact and low-cost solutions in the manipulation of THz radiation. We discuss here the plasmonic properties of doped Ge bow-tie antennas made with a low-point cost CMOS mainstream technology. These antennas display resonances between 500 and 700 GHz, probed by THz time domain spectroscopy. We show surface functionalization of the antennas with a thin layer of α-lipoic acid that red-shifts the antenna resonances by about 20 GHz. Moreover, we show that antennas protected with a silicon nitride cap layer exhibit a comparable red-shift when covered with the biolayer. This suggests that the electromagnetic fields at the hotspot extend well beyond the cap layer, enabling the possibility to use the antennas with an improved protection of the plasmonic material in conjunction with microfluidics.

Authors with CRIS profile

Bernd Witzigmann

Involved external institutions

Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics DE Germany (DE) Universität Kassel DE Germany (DE) Universität Osnabrück DE Germany (DE) Consiglio Nazionale delle Ricerche (CNR) / National Research Council of Italy IT Italy (IT)

How to cite

APA:

Chavarin, C.A., Hardt, E., Gruessing, S., Skibitzki, O., Costina, ., Spirito, D.,... Capellini, G. (2021). n-type Ge/Si antennas for THz sensing. Optics Express, 29(5), 7680-7689. https://doi.org/10.1364/OE.418382

MLA:

Chavarin, C. A., et al. "n-type Ge/Si antennas for THz sensing." Optics Express 29.5 (2021): 7680-7689.

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