Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond

Yianni SA, Creedon DL, Schenk AK, Xing K, Akhgar G, Hoxley DI, Ley L, McCallum JC, Pakes CI (2021)


Publication Type: Journal article

Publication year: 2021

Journal

Book Volume: 116

Article Number: 108377

DOI: 10.1016/j.diamond.2021.108377

Abstract

The influence of surface topography on phase coherent transport in the two-dimensional (2D) hole band of surface transfer doped hydrogen-terminated (100) diamond is investigated. Low-temperature magneto-conductance measurements were carried out with an applied in-plane magnetic field to quantify the effect of electronic micro-roughness on spin dephasing in the 2D hole band for Hall bar devices with similar transport characteristics, but significantly different topographic roughness. The electronic micro-roughness of the 2D hole band, described by the parameter d2L, where d is the root-mean-square (rms) fluctuation in the width of the quantum well and L is the correlation length of the fluctuations, is found to increase for surfaces with increased roughness. Fluctuations in the well width likely arise from a locally varying hole carrier density, arising for example from a local variation in the concentration of ionic components in the surface water layer.

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APA:

Yianni, S.A., Creedon, D.L., Schenk, A.K., Xing, K., Akhgar, G., Hoxley, D.I.,... Pakes, C.I. (2021). Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond. Diamond and Related Materials, 116. https://dx.doi.org/10.1016/j.diamond.2021.108377

MLA:

Yianni, Steve A., et al. "Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond." Diamond and Related Materials 116 (2021).

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