An Integrated 28 GHz Front-End Module for 5G Applications in 45 nm PD-SOI

Ciocoveanu R, Lammert V, Weigel R, Issakov V (2019)

Publication Type: Conference contribution

Publication year: 2019

Publisher: Institute of Electrical and Electronics Engineers Inc.

Conference Proceedings Title: 2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond, IMC-5G 2019

Event location: Atlanta, GA US

ISBN: 9781728131436

DOI: 10.1109/IMC-5G47857.2019.9160392

Abstract

This paper presents an integrated 28 GHz front-end module (FEM) for 5th Generation (5G) applications and fabricated in a 45 nm partially depleted silicon on insulator (PD-SOI) technology. In transmit (Tx) mode at 28 GHz, the measured saturated output power (Psat), maximum power-added efficiency (PAEmax), output-referred 1-dB compression point (OP1dB) are 17.2 dBm, 26 % and 16.7 dBm, respectively, with 86.4 mW dc power consumption from a 1.8 V supply. In receive (Rx) mode at 28 GHz, the measured gain, noise figure (NF), input-referred 1-dB compression point (IP1dB) are 9dB, 3.6dB and -10dBm, respectively, with 14.8mW dc power consumption from a 1 V supply. The chip core size is 0.62mm x 0.75mm.

Authors with CRIS profile

Radu Ciocoveanu Lehrstuhl für Technische Elektronik Vincent Lammert Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik

Involved external institutions

Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Ciocoveanu, R., Lammert, V., Weigel, R., & Issakov, V. (2019). An Integrated 28 GHz Front-End Module for 5G Applications in 45 nm PD-SOI. In 2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond, IMC-5G 2019. Atlanta, GA, US: Institute of Electrical and Electronics Engineers Inc..

MLA:

Ciocoveanu, Radu, et al. "An Integrated 28 GHz Front-End Module for 5G Applications in 45 nm PD-SOI." Proceedings of the 2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond, IMC-5G 2019, Atlanta, GA Institute of Electrical and Electronics Engineers Inc., 2019.

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