EMC Focused SiC Half-Bridge Modeling in the Frequency Domain: Procedure, advantages and limitations

Dobusch J, Dürbaum T (2020)


Publication Type: Conference contribution

Publication year: 2020

Publisher: Mesago PCIM GmbH

Book Volume: 1

Pages Range: 1410-1417

Conference Proceedings Title: PCIM Europe Conference Proceedings

ISBN: 9783800752454

Abstract

Electromagnetic compatibility (EMC) plays an important role in modern electronics and power electronic circuits are often a major source of disturbances. This paper analyses a half-bridge as a building block for converters and inverters and discusses possibilities to simulate this circuit. First measurements validate a time domain (TD) simulation. A proposed transformation to the frequency domain (FD) results in significant reduction of simulation time. However, high quality of the results requires detailed consideration regarding the switching behavior.

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How to cite

APA:

Dobusch, J., & Dürbaum, T. (2020). EMC Focused SiC Half-Bridge Modeling in the Frequency Domain: Procedure, advantages and limitations. In PCIM Europe Conference Proceedings (pp. 1410-1417). Mesago PCIM GmbH.

MLA:

Dobusch, Julian, and Thomas Dürbaum. "EMC Focused SiC Half-Bridge Modeling in the Frequency Domain: Procedure, advantages and limitations." Proceedings of the International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2020 Mesago PCIM GmbH, 2020. 1410-1417.

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