Test Setup for Loss Measurements of Inductive Components by using GaN-HEMTs

Kohlhepp B, Peller S, Kübrich D, Dürbaum T (2020)

Publication Type: Conference contribution

Publication year: 2020

Publisher: Institute of Electrical and Electronics Engineers Inc.

Conference Proceedings Title: 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics, COMPEL 2020

Event location: Aalborg DK

ISBN: 9781728171609

DOI: 10.1109/COMPEL49091.2020.9265698

Abstract

This paper describes and verifies a measurement setup based on GaN semiconductors to characterize losses of inductive components used in switched-mode power supplies. Due to insufficient datasheet parameters, especially core losses occurring in inductive components cannot be accurately calculated by simulation. Furthermore, proximity losses within windings are difficult to obtain due to inhomogeneous field distributions within inductive components. Therefore, the ability to measure losses of inductive components plays an important role in the development of power supplies. Conventional test setups use the DUT's AC voltage and current to obtain the losses. Based on [1] this paper designs and verifies a circuit that allows for loss measurements of inductive components by only employing DC voltage measurements. After a presentation of the measuring principle and the resulting test setup realization, it is verified by measuring the well-defined losses of an air coil.

Authors with CRIS profile

Benedikt Kohlhepp Professur für Optoelektronik Stefan Peller Professur für Optoelektronik Daniel Kübrich Professur für Optoelektronik Thomas Dürbaum Professur für Elektromagnetische Felder

How to cite

APA:

Kohlhepp, B., Peller, S., Kübrich, D., & Dürbaum, T. (2020). Test Setup for Loss Measurements of Inductive Components by using GaN-HEMTs. In 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics, COMPEL 2020. Aalborg, DK: Institute of Electrical and Electronics Engineers Inc..

MLA:

Kohlhepp, Benedikt, et al. "Test Setup for Loss Measurements of Inductive Components by using GaN-HEMTs." Proceedings of the 21st IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2020, Aalborg Institute of Electrical and Electronics Engineers Inc., 2020.

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