Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Nagy R, Dasari DBR, Babin C, Liu D, Vorobyov V, Niethammer M, Widmann M, Linkewitz T, Gediz I, Stoehr R, Weber HB, Ohshima T, Ghezellou M, Son NT, Ul-Hassan J, Kaiser F, Wrachtrup J (2021)

Publication Type: Journal article

Publication year: 2021

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 118

Pages Range: 144003

Issue: 14

DOI: 10.1063/5.0046563

Abstract

Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication, and sensing. Realizing scalability and increasing application complexity require entangling multiple individual systems, e.g., via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical interference experiments. Here, we demonstrate that silicon vacancy centers in semiconductor silicon carbide (SiC) provide a remarkably small natural distribution of their optical absorption/emission lines despite an elevated defect concentration of ≈0.43 μm−3. In particular, without any external tuning mechanism, we show that only 13 defects have to be investigated until at least two optical lines overlap within the lifetime-limited linewidth. Moreover, we identify emitters with overlapping emission profiles within diffraction-limited excitation spots, for which we introduce simplified schemes for the generation of computationally relevant Greenberger–Horne–Zeilinger and cluster states. Our results underline the potential of the CMOS-compatible SiC platform toward realizing networked quantum technology applications.

Authors with CRIS profile

Roland Nagy Juniorprofessur für Elektronische Bauelemente Heiko Weber Chair of Applied Physics

Additional Organisation(s)

Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Universität Stuttgart

Germany (DE) Linköping University

Sweden (SE) National Institutes for Quantum and Radiological Science and Technology

Japan (JP)

How to cite

APA:

Nagy, R., Dasari, D.B.R., Babin, C., Liu, D., Vorobyov, V., Niethammer, M.,... Wrachtrup, J. (2021). Narrow inhomogeneous distribution of spin-active emitters in silicon carbide. Applied Physics Letters, 118, 144003. https://dx.doi.org/10.1063/5.0046563

MLA:

Nagy, Roland, et al. "Narrow inhomogeneous distribution of spin-active emitters in silicon carbide." Applied Physics Letters 118 (2021): 144003.

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