Linearity Trade-offs in High-Voltage RF Switches for Antenna Tuning Applications
Özdamar O, Weigel R, Solomko V, Hagelauer A (2020)
Publication Type: Conference contribution
Publication year: 2020
Publisher: Institute of Electrical and Electronics Engineers Inc.
Book Volume: 2020-December
Pages Range: 896-898
Conference Proceedings Title: Asia-Pacific Microwave Conference Proceedings, APMC
Event location: Hong Kong
ISBN: 9781728169620
DOI: 10.1109/APMC47863.2020.9331544
Abstract
An analysis describing the harmonics distribution in a shunt aperture tuning RF switch operating in OFF mode is presented in the paper. The focus is put on the second and third harmonic power distribution as a function of geometry of an RF switch. The analytical findings are verified with measurements for which the two integrated circuits were manufactured in Infineon 130 nm RF switch technology. Both the analytical model and the measurements show, that there is a trade-off between the second and third harmonic depending on the geometry of the RF switch.
Authors with CRIS profile
Oguzhan Özdamar
Lehrstuhl für Technische Elektronik
Robert Weigel
Lehrstuhl für Technische Elektronik
Amelie Marietta Hagelauer
Involved external institutions
Germany (DE)How to cite
APA:
Özdamar, O., Weigel, R., Solomko, V., & Hagelauer, A. (2020). Linearity Trade-offs in High-Voltage RF Switches for Antenna Tuning Applications. In Jie Sun, Wai Ho Yu (Eds.), Asia-Pacific Microwave Conference Proceedings, APMC (pp. 896-898). Hong Kong, CN: Institute of Electrical and Electronics Engineers Inc..
MLA:
Özdamar, Oguzhan, et al. "Linearity Trade-offs in High-Voltage RF Switches for Antenna Tuning Applications." Proceedings of the 2020 Asia-Pacific Microwave Conference, APMC 2020, Hong Kong Ed. Jie Sun, Wai Ho Yu, Institute of Electrical and Electronics Engineers Inc., 2020. 896-898.
BibTeX: Download