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Highly Selective Non-Covalent On-Chip Functionalization of Layered Materials

Tilmann R, Weiß C, Cullen CP, Peters L, Hartwig O, Hoeltgen L, Stimpel-Lindner T, Knirsch K, Mcevoy N, Hirsch A, Duesberg GS (2021)

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Publication Type: Journal article

Publication year: 2021

Journal

DOI: 10.1002/aelm.202000564

Abstract

Non-covalent functionalization of layered 2D materials is an essential tool to modify and fully harness their optical, electrical, and chemical properties. Herein, a facile method enabling the selective formation of self-assembled monolayers (SAMs) of perylene bisimide (PBI) on transition metal dichalcogenides (TMDs), directly on the growth substrate (on-chip), is presented. Laterally-resolved infrared atomic force microscopy (AFM-IR) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) are applied as superior techniques to gain detailed information beyond traditional surface analysis techniques, such as Raman spectroscopy and AFM, on TMD/PBI structures. The highly selective functionalization conducted in organic solution on MoS2 and WSe2 opens up a pathway to controllable, versatile functionalization of layered materials, which is highly sought after for its potential in passivation, tuning of properties and applications in optics, electronics, and (bio-) sensing.

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How to cite

APA:

Tilmann, R., Weiß, C., Cullen, C.P., Peters, L., Hartwig, O., Hoeltgen, L.,... Duesberg, G.S. (2021). Highly Selective Non-Covalent On-Chip Functionalization of Layered Materials. Advanced Electronic Materials. https://dx.doi.org/10.1002/aelm.202000564

MLA:

Tilmann, Rita, et al. "Highly Selective Non-Covalent On-Chip Functionalization of Layered Materials." Advanced Electronic Materials (2021).

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