Molecular dynamics modeling of the radial heat transfer from silicon nanowires

Bejenari I, Burenkov A, Pichler P, Deretzis I, La Magna A (2020)

Publication Type: Conference contribution

Publication year: 2020

Publisher: Institute of Electrical and Electronics Engineers Inc.

Book Volume: 2020-September

Pages Range: 67-70

Conference Proceedings Title: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ISBN: 9784863487635

DOI: 10.23919/SISPAD49475.2020.9241646

Abstract

Thermal transport in radial direction in Si nanowires embedded into amorphous silicon dioxide has been studied using nonequilibrium molecular dynamics simulations. For comparison, we also considered the axial heat transfer. For Si nanowires with a radius of 2.6 nm, both radial and axial thermal conductivities were found to be about independent of the SiO2 thickness ranging from 1 nm to 3 nm. The radial thermal conductivity of the Si core and of the covering SiO2 material are similar and nearly equal to 1 W⊙K-1m-1. Thermal resistances for the heat transfer from uniformly heated nanowires in radial direction are by a factor of 3 to 4 lower than those for the heat transfer in axial direction.

Authors with CRIS profile

Peter Pichler Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) CNR Institute for Microelectronics and Microsystems (CNR-IMM) IT Italy (IT)

How to cite

APA:

Bejenari, I., Burenkov, A., Pichler, P., Deretzis, I., & La Magna, A. (2020). Molecular dynamics modeling of the radial heat transfer from silicon nanowires. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (pp. 67-70). Institute of Electrical and Electronics Engineers Inc..

MLA:

Bejenari, Igor, et al. "Molecular dynamics modeling of the radial heat transfer from silicon nanowires." Proceedings of the 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 Institute of Electrical and Electronics Engineers Inc., 2020. 67-70.

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