Experimental Study of the Coss-Losses Occurring During ZVS Transitions – Emphasis on Low and High Voltage GaN-HEMTs

Kohlhepp B, Kübrich D, Dürbaum T (2020)

Publication Type: Conference contribution, Conference Contribution

Publication year: 2020

Publisher: VDE

Pages Range: pp

Conference Proceedings Title: CIPS 2020

Event location: Berlin DE

ISBN: 978-3-8007-5225-6

Abstract

GaN-HEMTs offer completely new possibilities for the development of advanced power electronics. GaN devices enable, due to the lower parasitics, higher switching frequencies. However, high efficiency at high frequent operation requires ZVS. It is typically assumed that the ZVS transitions are lossless. However, at least in case of Si-SJ-MOSFET experiments show that sometimes losses occur during charging and discharging of the output capacitances. For this reason, this paper examines the losses occurring during ZVS by employing Sawyer Tower measurements of GaN devices. Losses are meas-ured depending on the amplitude of the Drain-Source voltage and frequency, finding that these are negligible.

Authors with CRIS profile

Benedikt Kohlhepp Professur für Optoelektronik Daniel Kübrich Professur für Optoelektronik Thomas Dürbaum Professur für Elektromagnetische Felder

How to cite

APA:

Kohlhepp, B., Kübrich, D., & Dürbaum, T. (2020). Experimental Study of the Coss-Losses Occurring During ZVS Transitions – Emphasis on Low and High Voltage GaN-HEMTs. In VDE (Eds.), CIPS 2020 (pp. pp). Berlin, DE: VDE.

MLA:

Kohlhepp, Benedikt, Daniel Kübrich, and Thomas Dürbaum. "Experimental Study of the Coss-Losses Occurring During ZVS Transitions – Emphasis on Low and High Voltage GaN-HEMTs." Proceedings of the 11th International Conference on Integrated Power Electronics Systems (CIPS 2020), Berlin Ed. VDE, VDE, 2020. pp.

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