Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide
Nagy R, Widmann M, Niethammer M, Dasari DBR, Gerhardt I, Soykal OO, Radulaski M, Ohshima T, Vuckovic J, Nguyen Tien Son , Ivanov IG, Economou SE, Bonato C, Lee SY, Wrachtrup J (2018)
Publication Type: Journal article
Publication year: 2018
Journal
Book Volume: 9
Article Number: 034022
Journal Issue: 3
DOI: 10.1103/PhysRevApplied.9.034022
Abstract
Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3/2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.
Authors with CRIS profile
Additional Organisation(s)
Involved external institutions
Universität Stuttgart
Germany (DE)
Virginia Polytechnic Institute and State University (VirginiaTech)
United States (USA) (US)
Heriot-Watt University
United Kingdom (GB)
Stanford University
United States (USA) (US)
U.S. Naval Research Laboratory
United States (USA) (US)
Linköping University
Sweden (SE)
Korea Institute of Science and Technology (KIST) / 한국과학기술연구원
Korea, Republic of (KR)
National Institutes for Quantum and Radiological Science and Technology
Japan (JP)
Germany (DE)
Virginia Polytechnic Institute and State University (VirginiaTech)
United States (USA) (US)
Heriot-Watt University
United Kingdom (GB)
Stanford University
United States (USA) (US)
U.S. Naval Research Laboratory
United States (USA) (US)
Linköping University
Sweden (SE)
Korea Institute of Science and Technology (KIST) / 한국과학기술연구원
Korea, Republic of (KR)
National Institutes for Quantum and Radiological Science and Technology
Japan (JP)
How to cite
APA:
Nagy, R., Widmann, M., Niethammer, M., Dasari, D.B.R., Gerhardt, I., Soykal, O.O.,... Wrachtrup, J. (2018). Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide. Physical Review Applied, 9(3). https://dx.doi.org/10.1103/PhysRevApplied.9.034022
MLA:
Nagy, Roland, et al. "Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide." Physical Review Applied 9.3 (2018).
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