Non-substituted fused bis-tetracene based thin-film transistor with self-assembled monolayer hybrid dielectrics

Zhao B, Feofanov M, Lungerich D, Park H, Rejek T, Wittmann J, Sarcletti M, Amsharov K, Halik M (2020)


Publication Type: Journal article

Publication year: 2020

Journal

DOI: 10.1007/s11706-020-0518-4

Abstract

Polycyclic aromatic hydrocarbons with zigzag peripheries are high perspective candidates for organic electronics. However, large fused acenes are still poorly studied due to the tedious synthesis. Herein we report a non-substituted fused bistetracene DBATT (2.3,8.9-dibenzanthanthrene) as the semiconductor on low-voltage-driven organic thin-film transistors. The systematic studies of thin-film growth on various self-assembled monolayer (SAM) modified gate dielectrics and the electrical performances were carried out. The sub-monolayer of the semiconductor film shows larger island domains on the alkyl chain SAM. This device exhibits the hole mobility of 0.011 cm2·V−1·s−1 with a current ratio of IonIIoff above 105.

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APA:

Zhao, B., Feofanov, M., Lungerich, D., Park, H., Rejek, T., Wittmann, J.,... Halik, M. (2020). Non-substituted fused bis-tetracene based thin-film transistor with self-assembled monolayer hybrid dielectrics. Frontiers of Materials Science. https://dx.doi.org/10.1007/s11706-020-0518-4

MLA:

Zhao, Baolin, et al. "Non-substituted fused bis-tetracene based thin-film transistor with self-assembled monolayer hybrid dielectrics." Frontiers of Materials Science (2020).

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