Reducing on-resistance for SiC diodes by thin wafer and laser anneal technology

Rusch O, Hellinger C, Moult J, Corcoran Y, Erlbacher T (2020)

Publication Type: Conference contribution

Publication year: 2020

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Book Volume: 1004 MSF

Pages Range: 155-160

Conference Proceedings Title: Materials Science Forum

Event location: Kyoto JP

ISBN: 9783035715798

DOI: 10.4028/www.scientific.net/MSF.1004.155

Abstract

This work presents the influence of Thin Wafer und Laser Anneal Technology on the electrical performance of 4H-SiC devices. Substrate thinning and backside ohmic contact formation via laser annealing were successfully applied to in-house designed and manufactured 6 A 650 V SiC diodes at IISB, improving its forward characteristics. The given devices exhibit an on-state voltage drop (VF) reduction from 1.78 V to 1.62 V at 6 A rated current while maintaining blocking capabilities of more than 1.1 kV with leakage currents less than 1 µA at 650 V nominal voltage. On-resistance (RON) was lowered by approx. 30 % to 90 mΩ and 60 % to 12 mΩ in Schottky and conductivity modulation state, respectively. Wafer thinning also allows reducing the influence of non-homogeneous distributed substrate doping concentrations, leading to a more narrow distribution of the forward characteristics of the devices across the wafer.

Authors with CRIS profile

Oleg Rusch Lehrstuhl für Elektronische Bauelemente Carsten Hellinger Lehrstuhl für Elektronische Bauelemente Tobias Erlbacher Lehrstuhl für Elektronische Bauelemente

How to cite

APA:

Rusch, O., Hellinger, C., Moult, J., Corcoran, Y., & Erlbacher, T. (2020). Reducing on-resistance for SiC diodes by thin wafer and laser anneal technology. In Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Eds.), Materials Science Forum (pp. 155-160). Kyoto, JP: Trans Tech Publications Ltd.

MLA:

Rusch, Oleg, et al. "Reducing on-resistance for SiC diodes by thin wafer and laser anneal technology." Proceedings of the 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019, Kyoto Ed. Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka, Trans Tech Publications Ltd, 2020. 155-160.

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