Impact of channel implantation on a 4h-sic cmos operational amplifier for high temperature applications

Albrecht M, Pérez D, Martens R, Bauer AJ, Erlbacher T (2020)

Publication Type: Conference contribution

Publication year: 2020

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Book Volume: 1004 MSF

Pages Range: 1123-1128

Conference Proceedings Title: Materials Science Forum

Event location: Kyoto JP

ISBN: 9783035715798

DOI: 10.4028/www.scientific.net/MSF.1004.1123

Abstract

In this work, the impact of channel implantations (IMP) on the electrical characteristics of SiC n-and p-MOSFETs and analog SiC-CMOS operational amplifiers (OpAmp) is investigated. For this purpose, MOSFETs and Miller OpAmps with and without IMP were fabricated and electrically characterized from room temperature up to 350°C. For devices with IMP the absolute values of the threshold voltages of n-and p-MOSFETs were reduced by 1.5 V and the electron channel mobility of the n-MOSFET was increased from 13 to 23 cm²/Vs whereas the hole channel mobility of the p-MOSFET remained constant at 6 cm²/Vs. For the resulting OpAmp with IMP, the common-mode input voltage range as well as the open loop gain were increased by 1.5 V and 4 dB compared to non-implanted devices. This improvement was observed across the entire analyzed temperature range from room temperature up to 350°C.

Authors with CRIS profile

Matthäus Albrecht Lehrstuhl für Elektronische Bauelemente Roric Martens Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Albrecht, M., Pérez, D., Martens, R., Bauer, A.J., & Erlbacher, T. (2020). Impact of channel implantation on a 4h-sic cmos operational amplifier for high temperature applications. In Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Eds.), Materials Science Forum (pp. 1123-1128). Kyoto, JP: Trans Tech Publications Ltd.

MLA:

Albrecht, Matthäus, et al. "Impact of channel implantation on a 4h-sic cmos operational amplifier for high temperature applications." Proceedings of the 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019, Kyoto Ed. Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka, Trans Tech Publications Ltd, 2020. 1123-1128.

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