Method for compensating the effects of gan-hemts on the output voltage in inverters during dead time

Kohlhepp B, Lanvermann T, Dürbaum T (2020)

Publication Type: Conference contribution

Publication year: 2020

Publisher: Mesago PCIM GmbH

Book Volume: 1

Pages Range: 1506-1513

Conference Proceedings Title: PCIM Europe Conference Proceedings

Event location: Virtual, Online

ISBN: 9783800752454

Abstract

By using GaN-HEMTs in three-phase inverters, significantly higher switching frequencies can be achieved compared to conventional Si-MOSFETs. However, as the switching frequency increases, the influence of the GaN-HEMTs on the waveform of the output voltage also rises during dead time. Therefore, this paper demonstrates a procedure that compensates the influence of dead time, reverse conduction of GaN-HEMTs and the switching transition.

Authors with CRIS profile

Benedikt Kohlhepp Professur für Elektromagnetische Felder Tim Lanvermann Professur für Optoelektronik Thomas Dürbaum Professur für Elektromagnetische Felder

How to cite

APA:

Kohlhepp, B., Lanvermann, T., & Dürbaum, T. (2020). Method for compensating the effects of gan-hemts on the output voltage in inverters during dead time. In PCIM Europe Conference Proceedings (pp. 1506-1513). Virtual, Online: Mesago PCIM GmbH.

MLA:

Kohlhepp, Benedikt, Tim Lanvermann, and Thomas Dürbaum. "Method for compensating the effects of gan-hemts on the output voltage in inverters during dead time." Proceedings of the International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2020, Virtual, Online Mesago PCIM GmbH, 2020. 1506-1513.

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