RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC

Weiße J, Matthus C, Schlichting H, Mitlehner H, Erlbacher T (2020)

Publication Type: Journal article

Publication year: 2020

Journal

IEEE Transactions on Electron Devices Institute of Electrical and Electronics Engineers (IEEE)

Book Volume: 67

Pages Range: 3278-3284

Journal Issue: 8

DOI: 10.1109/TED.2020.3002730

Abstract

The electrical behavior of lateral 4H-SiC n-laterally-diffused metal-oxide semiconductor (LDMOS) transistors with reduced surface field (RESURF) for integrated circuits was designed, measured, and modeled using different design variations. An additional implanted n-layer forming the drift region of the device in a p-doped epitaxy promotes a RESURF and thereby enhances the breakdown capability. The design rules of the presented power MOSFET are compatible to an existing technology for a novel 20-V 4H-SiC CMOS process. The dose of the additionally implanted RESURF region with a depth of approximately 390 nm was 3.5 center dot 10(12) cm(-2). Breakdown voltages in the range of 372-981 V and ON-state resistances from 1000 down to 54 m Omega cm(2) were measured, depending on the design variations. The best measured figure-of-merit (FOM, V2BD/RON) value results in 12.3 MW/cm(2). Additionally, the electrical behavior of the presented n-LDMOS transistor was compared to a TCAD simulation model. Hereby, design guidelines concerning the length of the channel, drift region, and field plate were derived, which will be helpful for further investigations. Moreover, according to the simulations, a deeper RESURF region of 1 mu m and a higher RESURF dose of 6 center dot 10(12) cm(-2) would even result in FOM values above 43 MW/cm(2).

Authors with CRIS profile

Julietta Förthner Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Germany (DE)

How to cite

APA:

Weiße, J., Matthus, C., Schlichting, H., Mitlehner, H., & Erlbacher, T. (2020). RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC. IEEE Transactions on Electron Devices, 67(8), 3278-3284. https://dx.doi.org/10.1109/TED.2020.3002730

MLA:

Weiße, Julietta, et al. "RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC." IEEE Transactions on Electron Devices 67.8 (2020): 3278-3284.

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