A Method for the Characterization of Adhesion Strength Degradation of Thin Films on Si-Substrate under thermal cycling test

Zhao D, Letz S, Schletz A, März M (2020)


Publication Language: English

Publication Type: Conference contribution, Conference Contribution

Publication year: 2020

Event location: Berlin DE

ISBN: 978-3-8007-5225-6

Abstract

The adhesion strength of thin films on the substrate, as one of the most important mechanical properties, decides not only the performance of microelectronics assemblies, but also their durability and longevity in a critical manner. In this paper, a recently developed method to characterize interfacial properties, the cross-sectional nanoindentation (CSN), will be employed to measure the adhesion strength of the thin films on Si substrate quantitatively. By measuring the geometric properties of the interfacial crack and computing the corresponding strain energy release rate, the adhesion strength of thin film and their degradation during thermal cycling test (TCT) will be assessed.

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How to cite

APA:

Zhao, D., Letz, S., Schletz, A., & März, M. (2020). A Method for the Characterization of Adhesion Strength Degradation of Thin Films on Si-Substrate under thermal cycling test. In IEEE (Eds.), Proceedings of the 2020 CIPS. Berlin, DE.

MLA:

Zhao, Dawei, et al. "A Method for the Characterization of Adhesion Strength Degradation of Thin Films on Si-Substrate under thermal cycling test." Proceedings of the 2020 CIPS, Berlin Ed. IEEE, 2020.

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