Transformer-Coupled D-Band PA with 11.8 dBm Psat and 6.3 % PAE in 0.13 μm SiGe BiCMOS

Romstadt J, Lammert V, Pohl N, Issakov V (2020)

Publication Type: Conference contribution

Publication year: 2020

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 77-80

Conference Proceedings Title: 2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2020

Event location: San Antonio, TX US

ISBN: 9781728121291

DOI: 10.1109/SIRF46766.2020.9040185

Abstract

In this paper we present a fully differential power amplifier (PA) in a 0.13 μm SiGe BiCMOS technology operating in D-Band. The PA has a maximum PAE of 6.3 %, a saturated output power of 11.8 dBm at a frequency of 114 GHz and is designed to an optimum load impedance different from 50 Ω offered by a chip to PCB transition. In the previously designed SiGe BiCMOS PAs for D-Band applications, interstage matching networks consist of transmission lines, whereas in this work a transformer is used because a transformer offers the advantage of being an efficient and compact higher-order filter. Therefore, the amplifier only occupies an active chip area of 0.19 mm2 including baluns. In CMOS transformer-based coupling between the stages is quite common, whereas in SiGe this has not been demonstrated so far. Accordingly, to the authors best knowledge, this is the first D-Band SiGe PA using transformer-coupling.

Authors with CRIS profile

Vincent Lammert Lehrstuhl für Technische Elektronik

Involved external institutions

Ruhr-Universität Bochum (RUB) DE Germany (DE) Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Romstadt, J., Lammert, V., Pohl, N., & Issakov, V. (2020). Transformer-Coupled D-Band PA with 11.8 dBm Psat and 6.3 % PAE in 0.13 μm SiGe BiCMOS. In 2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2020 (pp. 77-80). San Antonio, TX, US: Institute of Electrical and Electronics Engineers Inc..

MLA:

Romstadt, Justin, et al. "Transformer-Coupled D-Band PA with 11.8 dBm Psat and 6.3 % PAE in 0.13 μm SiGe BiCMOS." Proceedings of the 20th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2020, San Antonio, TX Institute of Electrical and Electronics Engineers Inc., 2020. 77-80.

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