Design of a 60 GHz 32% PAE Class-AB PA with 2nd Harmonic Control in 45-nm PD-SOI CMOS

Ciocoveanu R, Weigel R, Hagelauer A, Issakov V (2020)

Publication Type: Journal article, Online publication

Publication year: 2020

Journal

IEEE Transactions on Circuits and Systems I-Regular Papers

DOI: 10.1109/TCSI.2020.2984042

Abstract

This paper presents a 60 GHz highly efficient single stage differential stacked Class-AB power amplifier (PA) with second harmonic control (HC) for short range applications using mm-wave radar. The circuit is realized in a 45nm partially depleted sillicon-on-insulator (PD-SOI) CMOS technology. Measurement results show that the power amplifier achieves a saturated output power (Psat) of 16.4dBm with a competitive maximum power-added efficiency (PAEmax) of 32% at 60 GHz. The output-referred 1-dB compression point (OP1dB) is 9.5 dBm. Furthermore, the circuit draws 40mA from a single 1.8V supply and the chip core size is 0.36mm x 0.35 mm.

Authors with CRIS profile

Radu Ciocoveanu Lehrstuhl für Technische Elektronik (LTE) Robert Weigel Lehrstuhl für Technische Elektronik (LTE) Amelie Marietta Hagelauer

Involved external institutions

Universität Bayreuth DE Germany (DE) Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Ciocoveanu, R., Weigel, R., Hagelauer, A., & Issakov, V. (2020). Design of a 60 GHz 32% PAE Class-AB PA with 2nd Harmonic Control in 45-nm PD-SOI CMOS. IEEE Transactions on Circuits and Systems I-Regular Papers. https://dx.doi.org/10.1109/TCSI.2020.2984042

MLA:

Ciocoveanu, Radu, et al. "Design of a 60 GHz 32% PAE Class-AB PA with 2nd Harmonic Control in 45-nm PD-SOI CMOS." IEEE Transactions on Circuits and Systems I-Regular Papers (2020).

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