Kazantsev D, Ryssel H (2020)
Publication Type: Journal article
Publication year: 2020
Book Volume: 127
Journal Issue: 12
DOI: 10.1063/1.5128104
Apertureless scanning near-field optical microscopy mapping of a slightly doped 4H-SiC epitaxial layer grown on a heavily doped 4H-SiC substrate was performed in a cleaved edge geometry. Surface phonon polariton waves excited by an external coherent light were observed on a sample surface that contains such an epilayer-defined strip near its edge. The light frequency was tuned close to the lattice resonance. Due to a low doping level in an epilayer, its electromagnetic response is determined mainly by the SiC lattice resonance. The rest of the sample surface corresponds to a substrate whose electromagnetic response is determined mainly by the free carriers so that phonon polariton phenomena get suppressed. Such an epilayer-defined strip (vanishing at 895 cm(-1) frequency) becomes more pronounced at 920 cm(-1) and, finally, the excited state gets completely confined within such a strip (938 cm(-1)) due to the differences in the electromagnetic properties of doped and undoped SiC.
APA:
Kazantsev, D., & Ryssel, H. (2020). ASNOM mapping of SiC epilayer doping profile and of surface phonon polariton waveguiding. Journal of Applied Physics, 127(12). https://doi.org/10.1063/1.5128104
MLA:
Kazantsev, Dmitry, and Heiner Ryssel. "ASNOM mapping of SiC epilayer doping profile and of surface phonon polariton waveguiding." Journal of Applied Physics 127.12 (2020).
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