Development of a silicon-diamond interface on (111) diamond

Schenk AK, Sear MJ, Dontschuk N, Tsai A, Rietwyk KJ, Tadich A, Cowie BC, Ley L, Stacey A, Pakes CI (2020)

Publication Type: Journal article

Publication year: 2020

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 116

Article Number: 071602

Journal Issue: 7

DOI: 10.1063/1.5144093

Abstract

We report the preparation of a silicon terminated (111) diamond surface. Low energy electron diffraction and core level photoemission demonstrate that this surface is highly ordered and homogeneous and possesses a negative electron affinity. Our analysis suggests that the surface reconstruction begins with the formation of silicon trimers that coalesce into a rhombohedral 2D silicon layer reminiscent of rhombohedral silicene.

Authors with CRIS profile

Lothar Ley Naturwissenschaftliche Fakultät

Involved external institutions

La Trobe University AU Australia (AU) The University of Melbourne AU Australia (AU) Monash University AU Australia (AU) Australian Synchrotron AU Australia (AU)

How to cite

APA:

Schenk, A.K., Sear, M.J., Dontschuk, N., Tsai, A., Rietwyk, K.J., Tadich, A.,... Pakes, C.I. (2020). Development of a silicon-diamond interface on (111) diamond. Applied Physics Letters, 116(7). https://doi.org/10.1063/1.5144093

MLA:

Schenk, A. K., et al. "Development of a silicon-diamond interface on (111) diamond." Applied Physics Letters 116.7 (2020).

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