An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs

Albrecht M, Klüpfel F, Erlbacher T (2020)


Publication Type: Journal article

Publication year: 2020

Journal

Book Volume: 67

Pages Range: 855-862

Journal Issue: 3

DOI: 10.1109/TED.2020.2967507

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How to cite

APA:

Albrecht, M., Klüpfel, F., & Erlbacher, T. (2020). An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs. IEEE Transactions on Electron Devices, 67(3), 855-862. https://dx.doi.org/10.1109/TED.2020.2967507

MLA:

Albrecht, Matthäus, Fabian Klüpfel, and Tobias Erlbacher. "An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs." IEEE Transactions on Electron Devices 67.3 (2020): 855-862.

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