Impact of High Sc Content on Crystal Morphology and RF Performance of Sputtered Al1-xScxN SMR BAW
Bogner A, Timme HJ, Bauder R, Mutzbauer A, Pichler D, Krenzer M, Reccius C, Weigel R, Hagelauer AM (2019)
Publication Type: Conference contribution
Publication year: 2019
Journal
Publisher: IEEE Computer Society
Book Volume: 2019-October
Pages Range: 706-709
Conference Proceedings Title: IEEE International Ultrasonics Symposium, IUS
Event location: Glasgow
ISBN: 9781728145969
DOI: 10.1109/ULTSYM.2019.8925777
Abstract
Applications using BAW devices benefit from large intrinsic electromechanical coupling materials, e.g. Al1-xScxN. This work reports BAW-SMRs using high piezoelectric Al1-xScxN and investigates the relations between Sc content, crystal morphology and resonator RF performance. Finally, key requirements for high quality Al1-xScxN thin-film growth are analyzed and discussed examplary for x = 20at.-%.
Authors with CRIS profile
Andreas Bogner
Lehrstuhl für Technische Elektronik
Robert Weigel
Lehrstuhl für Technische Elektronik
Amelie Marietta Hagelauer
Lehrstuhl für Technische Elektronik
Involved external institutions
Germany (DE)How to cite
APA:
Bogner, A., Timme, H.J., Bauder, R., Mutzbauer, A., Pichler, D., Krenzer, M.,... Hagelauer, A.M. (2019). Impact of High Sc Content on Crystal Morphology and RF Performance of Sputtered Al1-xScxN SMR BAW. In IEEE International Ultrasonics Symposium, IUS (pp. 706-709). Glasgow, GB: IEEE Computer Society.
MLA:
Bogner, Andreas, et al. "Impact of High Sc Content on Crystal Morphology and RF Performance of Sputtered Al1-xScxN SMR BAW." Proceedings of the 2019 IEEE International Ultrasonics Symposium, IUS 2019, Glasgow IEEE Computer Society, 2019. 706-709.
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