Aguilar Mendoza E, Issakov V, Weigel R (2020)
Publication Language: English
Publication Type: Conference contribution, Conference Contribution
Publication year: 2020
DOI: 10.1109/tcsii.2020.2984597
A 130 GHz fully integrated fundamental frequency transmitter (TX) module with 4.4 dBm single-ended measured output power in a 130 nm SiGe technology is presented. The transmitter achieves in measurement a phase noise of -88 dBc/Hz at 1 MHz offset frequency from a 130 GHz carrier and a tuning range of 17 GHz. Its relatively compact size, low power consumption and high output power, enables the TX module to
be integrated into more complex D-Band transceiver modules for radar and imaging applications. Due to the available measurement equipment, it was only possible to measure the output power single-ended. The measured single-ended output power is 4.4 dBm. This corresponds well to a simulated differential output
power of 8.1 dBm.Based on simulation results, the TX module can produce a maximum output power of 8.1 dBm. To the best of the author’s knowledge, the presented chip exhibits the highest output power fundamental frequency TX module among the recently reported state-of-the art chips in this frequency range.
APA:
Aguilar Mendoza, E., Issakov, V., & Weigel, R. (2020). A 130 GHz Fully-Integrated Fundamental-Frequency D-Band Transmitter Module with > 4 dBm Single-Ended Output Power. In Proceedings of the 2020 International Symposium on Circuits and Systems (ISCAS). Sevilla, ES.
MLA:
Aguilar Mendoza, Erick, Vadim Issakov, and Robert Weigel. "A 130 GHz Fully-Integrated Fundamental-Frequency D-Band Transmitter Module with > 4 dBm Single-Ended Output Power." Proceedings of the 2020 International Symposium on Circuits and Systems (ISCAS), Sevilla 2020.
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