Highly-Integrated Scalable D-band Receiver Frontend Modules in a 130 nm SiGe Technology for Imaging and Radar Applications
Aguilar Mendoza E, Issakov V, Weigel R (2020)
Publication Language: English
Publication Type: Conference contribution, Conference Contribution
Publication year: 2020
Event location: Cottbus, Brandenburg
Abstract
Two highly integrated, scalable D-Band receiver front-ends based on active and passive baluns which integrate a D-Band signal generator developed in a 130 nm SiGe technology are presented. The presented circuits exhibit a wide tuning range of 19 GHz around 110 GHz and achieve high conversion gains >20 dB and >12 dB for the active-based an passive-based approaches correspondingly. The new chips offer robust solutions for high-gain or high-linearity receivers while showing an extremely compact form factor. Both chips show competitive performance compared with state-of-the-art solutions. Due to their highly reduced area without compromising the power consumption, they can be directly integrated into high-density sensor arrays for imaging and radar applications.
Authors with CRIS profile
Erick Aguilar Mendoza
Lehrstuhl für Technische Elektronik (LTE)
Robert Weigel
Lehrstuhl für Technische Elektronik (LTE)
Involved external institutions
How to cite
APA:
Aguilar Mendoza, E., Issakov, V., & Weigel, R. (2020). Highly-Integrated Scalable D-band Receiver Frontend Modules in a 130 nm SiGe Technology for Imaging and Radar Applications. In Proceedings of the 2020 German Microwave Conference (GeMiC). Cottbus, Brandenburg, DE.
MLA:
Aguilar Mendoza, Erick, Vadim Issakov, and Robert Weigel. "Highly-Integrated Scalable D-band Receiver Frontend Modules in a 130 nm SiGe Technology for Imaging and Radar Applications." Proceedings of the 2020 German Microwave Conference (GeMiC), Cottbus, Brandenburg 2020.
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