Rühl M, Bergmann L, Krieger M, Weber HB (2020)
Publication Type: Journal article, Letter
Publication year: 2020
Book Volume: 20
Pages Range: 658-663
Journal Issue: 1
URI: https://pubs.acs.org/doi/10.1021/acs.nanolett.9b04419
DOI: 10.1021/acs.nanolett.9b04419
We present a versatile scheme dedicated to exerting strong electric fields up to 0.5 MV/cm on color centers in hexagonal silicon carbide, employing transparent epitaxial graphene electrodes. In both the axial and basal direction equally strong electric fields can be selectively controlled. Investigating the silicon vacancy (V-Si) in ensemble photoluminescence experiments, we report Stark splitting of the V1' line of 3 meV by a basal electrical field and a Stark shift of the V1 line of 1 meV in an axial electric field. The spectral fine-tuning of the V-Si, being an important candidate for realizing quantum networks, paves the way for truly indistinguishable single-photon sources.
APA:
Rühl, M., Bergmann, L., Krieger, M., & Weber, H.B. (2020). Stark Tuning of the Silicon Vacancy in Silicon Carbide. Nano Letters, 20(1), 658-663. https://dx.doi.org/10.1021/acs.nanolett.9b04419
MLA:
Rühl, Maximilian, et al. "Stark Tuning of the Silicon Vacancy in Silicon Carbide." Nano Letters 20.1 (2020): 658-663.
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