Measuring and Modeling of Dynamic On-State Resistance of GaN-HEMTs

Kohlhepp B, Kübrich D, Dürbaum T (2019)

Publication Type: Conference contribution

Publication year: 2019

Publisher: Institute of Electrical and Electronics Engineers Inc.

Conference Proceedings Title: 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe

Event location: Genova IT

ISBN: 9789075815313

DOI: 10.23919/EPE.2019.8915553

Abstract

GaN-HEMTs as switching devices impress with their very good properties and gain therefore a lot of attention from the power electronics community. However, some GaN devices may exhibit increased resistance during on-state due to charge trapping effects. As for designers of switch mode power supplies the internal structure of devices is concealed, measurements are the only way to gain information. This paper shows the measurement of the static on-state resistance of a GaN-HEMT. Furthermore, it quantifies the dynamic on-state resistance by measurement with a novel clamping circuit using a digitizer card with high resolution. Based on these results, it presents an easy to implement method for calculating conduction losses in the presence of dynamic on-state resistance.

Authors with CRIS profile

Benedikt Kohlhepp Professur für Optoelektronik Daniel Kübrich Professur für Optoelektronik Thomas Dürbaum Professur für Elektromagnetische Felder

How to cite

APA:

Kohlhepp, B., Kübrich, D., & Dürbaum, T. (2019). Measuring and Modeling of Dynamic On-State Resistance of GaN-HEMTs. In 2019 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe. Genova, IT: Institute of Electrical and Electronics Engineers Inc..

MLA:

Kohlhepp, Benedikt, Daniel Kübrich, and Thomas Dürbaum. "Measuring and Modeling of Dynamic On-State Resistance of GaN-HEMTs." Proceedings of the 21st European Conference on Power Electronics and Applications, EPE 2019 ECCE Europe, Genova Institute of Electrical and Electronics Engineers Inc., 2019.

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