Infrared Interlayer Exciton Emission in MoS2/WSe2 Heterostructures

Karni O, Barré E, Lau SC, Gillen R, Ma EY, Kim B, Watanabe K, Taniguchi T, Maultzsch J, Barmak K, Page RH, Heinz TF (2019)


Publication Type: Journal article

Publication year: 2019

Journal

Book Volume: 123

Article Number: 247402

Journal Issue: 24

DOI: 10.1103/PhysRevLett.123.247402

Abstract

We report light emission around 1 eV (1240 nm) from heterostructures of MoS2 and WSe2 transition metal dichalcogenide monolayers. We identify its origin in an interlayer exciton (ILX) by its wide spectral tunability under an out-of-plane electric field. From the static dipole moment of the state, its temperature and twist-angle dependence, and comparison with electronic structure calculations, we assign this ILX to the fundamental interlayer transition between the K valleys in this system. Our findings gain access to the interlayer physics of the intrinsically incommensurate MoS2/WSe2 heterostructure, including moiré and valley pseudospin effects, and its integration with silicon photonics and optical fiber communication systems operating at wavelengths longer than 1150 nm.

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APA:

Karni, O., Barré, E., Lau, S.C., Gillen, R., Ma, E.Y., Kim, B.,... Heinz, T.F. (2019). Infrared Interlayer Exciton Emission in MoS2/WSe2 Heterostructures. Physical Review Letters, 123(24). https://doi.org/10.1103/PhysRevLett.123.247402

MLA:

Karni, Ouri, et al. "Infrared Interlayer Exciton Emission in MoS2/WSe2 Heterostructures." Physical Review Letters 123.24 (2019).

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