Infrared Interlayer Exciton Emission in MoS2/WSe2 Heterostructures

Karni O, Barré E, Lau SC, Gillen R, Ma EY, Kim B, Watanabe K, Taniguchi T, Maultzsch J, Barmak K, Page RH, Heinz TF (2019)

Publication Type: Journal article

Publication year: 2019

Journal

Physical Review Letters American Physical Society

Book Volume: 123

Article Number: 247402

Journal Issue: 24

DOI: 10.1103/PhysRevLett.123.247402

Abstract

We report light emission around 1 eV (1240 nm) from heterostructures of MoS2 and WSe2 transition metal dichalcogenide monolayers. We identify its origin in an interlayer exciton (ILX) by its wide spectral tunability under an out-of-plane electric field. From the static dipole moment of the state, its temperature and twist-angle dependence, and comparison with electronic structure calculations, we assign this ILX to the fundamental interlayer transition between the K valleys in this system. Our findings gain access to the interlayer physics of the intrinsically incommensurate MoS2/WSe2 heterostructure, including moiré and valley pseudospin effects, and its integration with silicon photonics and optical fiber communication systems operating at wavelengths longer than 1150 nm.

Authors with CRIS profile

Roland Gillen Lehrstuhl für Experimentalphysik Janina Maultzsch Lehrstuhl für Experimentalphysik

Involved external institutions

Stanford University US United States (USA) (US) Columbia University US United States (USA) (US) National Institute of Materials Science (NIMS) JP Japan (JP)

How to cite

APA:

Karni, O., Barré, E., Lau, S.C., Gillen, R., Ma, E.Y., Kim, B.,... Heinz, T.F. (2019). Infrared Interlayer Exciton Emission in MoS2/WSe2 Heterostructures. Physical Review Letters, 123(24). https://doi.org/10.1103/PhysRevLett.123.247402

MLA:

Karni, Ouri, et al. "Infrared Interlayer Exciton Emission in MoS2/WSe2 Heterostructures." Physical Review Letters 123.24 (2019).

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