Increased RF-Losses at the GaN/Si Interface after Eutectic Die Attach

Reiser K, Twynam J, Brech H, Hardikar S, Weigel R (2019)

Publication Type: Conference contribution

Publication year: 2019

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 196-199

Conference Proceedings Title: EuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference

Event location: Paris FR

ISBN: 9782874870569

DOI: 10.23919/EuMIC.2019.8909678

Abstract

The influence of eutectic die attach on RF-substrate losses of AlGaN/GaN HEMTs grown on high-resistivity silicon substrates has been studied. A severe degradation in load pull efficiency is observed after die attach. Analyzing this degradation for dies attached to flanges with differing thermal expansion coefficient shows a linear relationship between substrate strain and load pull efficiency. Loss measurements of coplanar waveguides (CPWs) show increasing substrate losses with increasing strain, while the transistor on-resistance remains unaffected. The degradation in load pull efficiency is, therefore, attributed to increased substrate losses. By evaluating the bias dependence of low frequency capacitance measurements together with the bias dependence of CPW characteristics, we show that the increase in substrate loss can be explained by the formation of interface charge at the GaN/Si interface. To the best of our knowledge, this is the first time that GaN transistor efficiency degradation has been shown to correlate with transmission line losses and changes at the GaN/Si interface after eutectic die attach.

Authors with CRIS profile

Robert Weigel Lehrstuhl für Technische Elektronik

Involved external institutions

Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Reiser, K., Twynam, J., Brech, H., Hardikar, S., & Weigel, R. (2019). Increased RF-Losses at the GaN/Si Interface after Eutectic Die Attach. In EuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference (pp. 196-199). Paris, FR: Institute of Electrical and Electronics Engineers Inc..

MLA:

Reiser, Korbinian, et al. "Increased RF-Losses at the GaN/Si Interface after Eutectic Die Attach." Proceedings of the 14th European Microwave Integrated Circuits Conference, EuMIC 2019, Paris Institute of Electrical and Electronics Engineers Inc., 2019. 196-199.

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