Tang X, Matt G, Gao S, Gu E, Almora O, Brabec C (2019)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2019
Book Volume: 11
Pages Range: 39018-39025
Journal Issue: 42
Controllably manipulating the spectral response of broadband-absorbing semiconductors is crucial for developing wavelength-selective optoelectronic devices. In this article, we report for the first time, the bias-dependent spectral responses for a metal-halide perovskite photodiode. Tunable external quantum efficiencies in the short- and long-wavelength regimes, and the full spectral range (ca. 300-800 nm) are observed when the device is operated under short-circuit, and forward and reverse bias conditions, respectively. This observation is understood by the interplay of wavelength-dependent penetration depth and barrier formation within the photodiode device stack. The general applicability of this concept is confirmed by a systematic study on a series of mixed-halide perovskite devices. These results suggest that the proposed concept allows as a promising platform and should inspire further exploration of multispectral responsive optoelectronic devices.
APA:
Tang, X., Matt, G., Gao, S., Gu, E., Almora, O., & Brabec, C. (2019). Electrical-Field-Driven Tunable Spectral Responses in a Broadband-Absorbing Perovskite Photodiode. ACS Applied Materials and Interfaces, 11(42), 39018-39025. https://dx.doi.org/10.1021/acsami.9b14788
MLA:
Tang, Xiaofeng, et al. "Electrical-Field-Driven Tunable Spectral Responses in a Broadband-Absorbing Perovskite Photodiode." ACS Applied Materials and Interfaces 11.42 (2019): 39018-39025.
BibTeX: Download