On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs

Rasinger F, Hauck M, Rescher G, Aichinger T, Weber HB, Krieger M, Pobegen G (2019)

Publication Type: Journal article

Publication year: 2019

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 115

Pages Range: 152102

Issue: 15

DOI: 10.1063/1.5117829

Authors with CRIS profile

Martin Hauck Chair of Applied Physics Heiko Weber Chair of Applied Physics Michael Krieger Chair of Applied Physics

Involved external institutions

KAI Kompetenzzentrum Automobil- und Industrieelektronik GmbH AT Austria (AT) Infineon Technologies Austria AG AT Austria (AT)

How to cite

APA:

Rasinger, F., Hauck, M., Rescher, G., Aichinger, T., Weber, H.B., Krieger, M., & Pobegen, G. (2019). On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs. Applied Physics Letters, 115, 152102. https://dx.doi.org/10.1063/1.5117829

MLA:

Rasinger, Fabian, et al. "On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs." Applied Physics Letters 115 (2019): 152102.

BibTeX: Download