A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with -178 dBc/Hz FOMT

Breun S, Völkel M, Schrotz AM, Dietz M, Issakov V, Weigel R (2020)

Publication Language: English

Publication Status: Accepted

Publication Type: Conference contribution, Conference Contribution

Future Publication Type: Conference contribution

Publication year: 2020

DOI: 10.1109/sirf46766.2020.9040174

Abstract

This paper presents a low-power wideband push-push voltage controlled oscillator (VCO), achieving a frequency tuning-range (FTR) of 19 GHz (14 %) at a center frequency of 136 GHz. The VCO yields a minimum phase noise of −86.5 dBc/Hz at 1 MHz offset at a power consumption of around 27 mW from a 1.8 V supply, which yields a FOMT of −178 dBc/Hz. The chip is fabricated using a 130 nm SiGe BiCMOS technology with ft/fmax of 250 GHz/370 GHz, respectively, and is integrated with a by-32 divider chain attached to the fundamental output of the VCO, offering a 2.1 GHz output for an external phaselocked loop (PLL).

Authors with CRIS profile

Involved external institutions

Infineon Technologies AG Germany (DE)

How to cite

APA:

Breun, S., Völkel, M., Schrotz, A.-M., Dietz, M., Issakov, V., & Weigel, R. (2020). A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with -178 dBc/Hz FOMT. In Proceedings of the RWW 2020.

MLA:

Breun, Sascha, et al. "A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with -178 dBc/Hz FOMT." Proceedings of the RWW 2020 2020.

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