Heidorn C, Esteve R, Höchbauer T, Krieger M, Weber HB, Rupp R (2019)
Publication Type: Conference contribution
Publication year: 2019
Publisher: Trans Tech Publications Ltd
Book Volume: 963 MSF
Pages Range: 114-118
Conference Proceedings Title: Materials Science Forum
ISBN: 9783035713329
DOI: 10.4028/www.scientific.net/MSF.963.114
We studied the impact of ion implantation into the wafer substrate prior to the epitaxy process on the basal plane dislocation conversion behavior during epitaxial layer growth. Defect density measurements show an enhancing effect of the ion implantation on the basal plane dislocation to threading edge dislocation conversion. Analysis of the lateral conversion distribution, the stress field in the material as well as the wafer topography at the onset of epitaxial growth lead us to believe that stresses in the epitaxy layer cause the enhanced basal plane dislocation conversion.
APA:
Heidorn, C., Esteve, R., Höchbauer, T., Krieger, M., Weber, H.B., & Rupp, R. (2019). Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 114-118). Birmingham, GB: Trans Tech Publications Ltd.
MLA:
Heidorn, Christian, et al. "Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer." Proceedings of the 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, Birmingham Ed. Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield, Trans Tech Publications Ltd, 2019. 114-118.
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