Investigation of the growth kinetics of SiC crystals during physical vapor transport growth by the application of in-situ 3D computed tomography visualization
Arzig M, Salamon M, Uhlmann N, Wellmann P (2019)
Publication Language: English
Publication Status: Accepted
Publication Type: Journal article
Future Publication Type: Journal article
Publication year: 2019
Journal
Article Number: 1900778
Abstract
Computed tomography using X‐rays has been applied during bulk growth of SiC in order to investigate growth kinetics in‐situ during the physical vapor transport process. Besides the standard SiC source material, in particular a pure solid source SiC block is used. It is found that the growth rate is lowered as the sublimation of gaseous species is limited to the top part of the solid source. The morphological changes in the source area during growth differ significantly compared to the process when conventional powder is used. The formation of multiple growth centers on the surface of the seed is monitored in‐situ with a computed tomography system. In a series of experiments the influence of the supersaturation on the growth is examined. The in‐situ computed tomography shows that the curvature of the growth interface is stronger influenced by the thermal field at higher pressures. A high supersaturation leads to the formation of rather smooth surface morphologies while the formation of large steps on the surface was induced at lower supersaturations.
Authors with CRIS profile
Matthias Arzig
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Involved external institutions
Germany (DE)How to cite
APA:
Arzig, M., Salamon, M., Uhlmann, N., & Wellmann, P. (2019). Investigation of the growth kinetics of SiC crystals during physical vapor transport growth by the application of in-situ 3D computed tomography visualization. Advanced Engineering Materials. https://dx.doi.org/10.1002/adem.201900778
MLA:
Arzig, Matthias, et al. "Investigation of the growth kinetics of SiC crystals during physical vapor transport growth by the application of in-situ 3D computed tomography visualization." Advanced Engineering Materials (2019).
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