Tailoring the Charge Transport Properties of Printable Si-NCs By Conjugated Organic Ligands

Makhdoom A, Sgobba V, Khanzada LS, Fladischer S, Spiecker E (2019)


Publication Language: English

Publication Status: Published

Publication Type: Journal article

Publication year: 2019

Journal

Publisher: WILEY-V C H VERLAG GMBH

Book Volume: 216

Article Number: ARTN 1900040

Journal Issue: 11

DOI: 10.1002/pssa.201900040

Abstract

Silicon is dominating the world in photovoltaic technology. The widely used mono crystalline and poly crystalline wafer technologies are expensive to process. As an alternative, technology of silicon nanocrystals (Si-NCs) is a necessity for economical processing of PV modules. In this work, commercially prepared Si-NCs with a mean diameter of 60 nm is utilized with a pretreatment process followed by functionalization. Styryl and 1-ethenyl-4-fluoro benzyl conjugate moieties are grafted on hydrogen-terminated Si-NCs via hydrosilylation of phenylacetylene and 1-ethyny1-4-fluoro benzene, respectively. Thick-films of these functionalized Si-NCs with different thicknesses are prepared and analyzed in a purposed device architecture at room temperature which reveals a p-type character of functionalized Si-NCs films. Detail analysis of current density voltage U V) characteristics of styryl functionalized Si-NCs films shows that the drifting of charge carriers follows a power law relationship V") in the presence of exponentially distributed trap states. Moreover, a unique voltage dependence of the J V curves also reveals a transition between direct and Fowler Nordheim (F N) tunneling mechanisms.

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APA:

Makhdoom, A., Sgobba, V., Khanzada, L.S., Fladischer, S., & Spiecker, E. (2019). Tailoring the Charge Transport Properties of Printable Si-NCs By Conjugated Organic Ligands. physica status solidi (a), 216(11). https://dx.doi.org/10.1002/pssa.201900040

MLA:

Makhdoom, Atif, et al. "Tailoring the Charge Transport Properties of Printable Si-NCs By Conjugated Organic Ligands." physica status solidi (a) 216.11 (2019).

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