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Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC

Tarekegne AT, Norrman K, Jokubavicius V, Syväjärvi M, Schuh P, Wellmann P, Ou H (2019)

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Publication Type: Journal article

Publication year: 2019

Journal

Book Volume: 125

Article Number: 172

Journal Issue: 9

DOI: 10.1007/s00340-019-7279-8

Abstract

High concentrations of aluminum (Al) and nitrogen (N) dopants of 6H SiC have been achieved by a fast sublimation growth process. The Al–N co-doped 6H-SiC layer exhibits a strong light-blue photoluminescence emission at low temperatures due to emissions from DI centers and donor acceptor pairs (DAP). The photoluminescence quenching mechanisms of those emissions are different. The decrease of free carrier capture cross-section as temperature increases according to the cascade capture process causes quenching of the photoluminescence emission form DI centers. Emission from Al–N DAP centers exhibits an exponential quenching with activation energy of (95 ± 10) meV. This is attributed to a competing hole capture by non-radiative defect in a multiphonon emission process.

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How to cite

APA:

Tarekegne, A.T., Norrman, K., Jokubavicius, V., Syväjärvi, M., Schuh, P., Wellmann, P., & Ou, H. (2019). Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC. Applied Physics B-Lasers and Optics, 125(9). https://dx.doi.org/10.1007/s00340-019-7279-8

MLA:

Tarekegne, Abebe T., et al. "Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC." Applied Physics B-Lasers and Optics 125.9 (2019).

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