Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

Schuh P, Steiner J, La Via F, Mauceri M, Zielinski M, Wellmann P (2019)

Publication Language: English

Publication Type: Journal article, Original article

Publication year: 2019

Journal

Materials MDPI

Book Volume: 12

Article Number: 2353

URI: https://www.mdpi.com/1996-1944/12/15/2353

DOI: 10.3390/ma12152353

Open Access Link: https://www.mdpi.com/journal/materials

Abstract

The growth of 3C-SiC shows technological challenges, such as high supersaturation, a silicon-rich gas phase and a high vertical temperature gradient. We have developed a transfer method creating high-quality 3C-SiC-on-SiC (100) seeding stacks, suitable for use in sublimation “sandwich” epitaxy (SE). This work presents simulation data on the change of supersaturation and the temperature gradient between source and seed for the bulk growth. A series of growth runs on increased source to seed distances was characterized by XRD and Raman spectroscopy. Results show a decrease in quality in terms of single-crystallinity with a decrease in supersaturation. Morphology analysis of as-grown material indicates an increasing protrusion dimension with
increasing thickness. This eect limits the achievable maximal thickness. Additional polytype inclusions were observed, which began to occur with low supersaturation (S 0.06) and prolonged growth (increase of carbon gas-species).

Authors with CRIS profile

Philipp Schuh Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Johannes Steiner Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

CNR Institute for Microelectronics and Microsystems (CNR-IMM) IT Italy (IT) NOVASiC FR France (FR) E.T.C. (LPE Spa - Epitaxial Technology Center) IT Italy (IT)

How to cite

APA:

Schuh, P., Steiner, J., La Via, F., Mauceri, M., Zielinski, M., & Wellmann, P. (2019). Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks. Materials, 12. https://dx.doi.org/10.3390/ma12152353

MLA:

Schuh, Philipp, et al. "Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks." Materials 12 (2019).

BibTeX: Download