On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics

Rattmann G, Pichler P, Erlbacher T (2019)

Publication Type: Journal article

Publication year: 2019

Journal

physica status solidi (a) Wiley

Book Volume: 216

Article Number: 1900167

DOI: 10.1002/pssa.201900167

Abstract

For the realization of high breakdown voltages in power electronics, a low-cost technology is developed, which allows the deep diffusion of aluminum from a physically deposited source. The approach requires only standard process steps that are already established in the manufacturing of silicon power devices. The sheet concentration of the diffusion profiles exceeds, with 8 x 10(13) cm(-2), the ones of comparable implanted and annealed profiles by up to a factor of two. A full numerical analysis of the resulting profiles is provided.

Authors with CRIS profile

Peter Pichler Technische Fakultät Tobias Erlbacher Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Rattmann, G., Pichler, P., & Erlbacher, T. (2019). On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics. physica status solidi (a), 216. https://dx.doi.org/10.1002/pssa.201900167

MLA:

Rattmann, Gudrun, Peter Pichler, and Tobias Erlbacher. "On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics." physica status solidi (a) 216 (2019).

BibTeX: Download