Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440)

Weiße J, Hauck M, Krieger M, Bauer AJ, Erlbacher T (2019)

Publication Type: Journal article, Erratum

Publication year: 2019

Journal

AIP Advances AIP Publishing

Book Volume: 9

Article Number: 079901

Journal Issue: 7

DOI: 10.1063/1.5118666

Abstract

This article was originally published online on 9 May 2019. Due to a production error, the last sentence of the abstract and the second paragraph, second sentence of the conclusions appeared incorrectly. AIP Publishing apologizes for this error. All online versions of the article were corrected on 16 May 2019.

Authors with CRIS profile

Julietta Förthner Lehrstuhl für Elektronische Bauelemente Martin Hauck Chair of Applied Physics Michael Krieger Chair of Applied Physics

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Weiße, J., Hauck, M., Krieger, M., Bauer, A.J., & Erlbacher, T. (2019). Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440). AIP Advances, 9(7). https://dx.doi.org/10.1063/1.5118666

MLA:

Weiße, Julietta, et al. "Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440)." AIP Advances 9.7 (2019).

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