Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission
Liao X, Jeong AR, Wilks RG, Wiesner S, Rusu M, Félix R, Xiao T, Hartmann C, Bär M (2019)
Publication Type: Journal article
Publication year: 2019
Journal
Book Volume: 4
Pages Range: 10985-10990
Journal Issue: 6
Abstract
The chemical and electronic structure of MoO3 thin films is monitored by synchrotron-based hard X-ray photoelectron spectroscopy while annealing from room temperature to 310 °C. Color-coded 2D intensity maps of the Mo 3d and O 1s and valence band maximum (VBM) spectra show the evolution of the annealing-induced changes. Broadening of the Mo 3d and O 1s spectra indicate the reduction of MoO3. At moderate temperatures (120-200 °C), we find spectral evidence for the formation of Mo5+ and at higher temperatures (>165 °C) also of Mo4+ states. These states can be related to the spectral intensity above the VBM attributed to O vacancy induced gap states caused by partial filling of initially unoccupied Mo 4d-derived states. A clear relation between annealing temperature and the induced changes in the chemical and electronic structure suggests this approach as a route for deliberate tuning of MoO3 thin-film properties.
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APA:
Liao, X., Jeong, A.R., Wilks, R.G., Wiesner, S., Rusu, M., Félix, R.,... Bär, M. (2019). Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission. ACS Omega, 4(6), 10985-10990. https://dx.doi.org/10.1021/acsomega.9b01027
MLA:
Liao, Xiaxia, et al. "Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission." ACS Omega 4.6 (2019): 10985-10990.
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