Non-linear Input Capacitance Determination of WBG Power FETs using Gate Charge Measurements

Gerstner H, Endruschat A, Heckel T, Joffe C, Eckardt B, März M (2018)

Publication Language: English

Publication Type: Conference contribution, Conference Contribution

Publication year: 2018

Event location: Atlanta, GA US

DOI: 10.1109/WiPDA.2018.8569089

Abstract

This paper discusses the measurement of the input capacitances Cgs and Cgd of SiC and GaN power FETs in  order to implement simulation models with an improved mapping of the drain-source voltage vds and drain current id during the switching operation. Based on the gate charge characteristic measured at an inductive load condition using different drain current values and temperature settings, the gate current is allocated to the charging of the gate-drain capacitance Cgd and the gate-source capacitance Cgs. With this approach the capacitance characteristics Cgs(vgs) and Cgd(vgd) are determined in the full operating range of the gate-source voltage vgs and  gate-drain voltage vgd.






Authors with CRIS profile

Martin März Lehrstuhl für Leistungselektronik

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Gerstner, H., Endruschat, A., Heckel, T., Joffe, C., Eckardt, B., & März, M. (2018). Non-linear Input Capacitance Determination of WBG Power FETs using Gate Charge Measurements. In IEEE (Eds.), Proceedings of the 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). Atlanta, GA, US.

MLA:

Gerstner, Holger, et al. "Non-linear Input Capacitance Determination of WBG Power FETs using Gate Charge Measurements." Proceedings of the 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Atlanta, GA Ed. IEEE, 2018.

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