Retrofitting Wide Band Gap Devices to classic Power Modules using Silicon RC Snubbers

Matlok S, Boettcher N, Jahn M, Hörauf P, Erlbacher T, Eckardt B (2019)

Publication Language: English

Publication Type: Conference contribution, Conference Contribution

Publication year: 2019

Event location: Nürnberg DE

URI: https://www.researchgate.net/publication/331642497_Retrofitting_Wide_Band_Gap_Devices_to_classic_Power_Modules_using_Silicon_RC_Snubbers

Abstract

Parasitic inductance causes voltage overshoot and oscillations in classic hard-switched commutation cells and power modules. Newly introduced silicon-based resistive capacitors (SiRC) can short the switching cell inside the power module itself and thereby unlink external parasitic inductance. Classic and mechanically robust power modules are now capable of switching large currents with unlimited turn-on and turn-off speed. This approach minimizes voltage spikes and remaining oscillations without use of expensive integrated or external attached pulse capacitors. Additionally, cutting down switching losses saves chip area, energy and gains power rating of these SiRC-based power modules.

Authors with CRIS profile

Philipp Hörauf Lehrstuhl für Leistungselektronik Tobias Erlbacher Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Matlok, S., Boettcher, N., Jahn, M., Hörauf, P., Erlbacher, T., & Eckardt, B. (2019). Retrofitting Wide Band Gap Devices to classic Power Modules using Silicon RC Snubbers. In Proceedings of the 2019 PCIM Europe. Nürnberg, DE.

MLA:

Matlok, Stefan, et al. "Retrofitting Wide Band Gap Devices to classic Power Modules using Silicon RC Snubbers." Proceedings of the 2019 PCIM Europe, Nürnberg 2019.

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