A 20.7% PAE 3-Stage 60 GHz Power Amplifier for Radar Applications in 28 nm Bulk CMOS

Ciocoveanu R, Weigel R, Hagelauer AM, Issakov V (2019)

Publication Language: English

Publication Type: Conference contribution, Conference Contribution

Publication year: 2019

Conference Proceedings Title: 2019 14th European Microwave Integrated Circuits Conference (EuMIC)

Event location: Paris FR

ISBN: 978-2-87487-056-9

DOI: 10.23919/EuMIC.2019.8909508

Abstract

This paper presents a highly efficient 3-stage differential Class-B power amplifier (PA) for short range radar applications, realized in a 28nm bulk CMOS technology. Measurement results show a saturated output power (Psat) of 11.9dBm with a 20.7% power-added efficiency (PAE) at 60 GHz. Moreover, the measurements show that for a frequency range from 57 GHz to 64 GHz, the Psat varies from 10.5dBm to 11.2dBm and the circuit draws 26mA from a 0.9V power supply. Furthermore, the fabricated chip has an area of 0.61mm x 0.31mm including the pads.

Authors with CRIS profile

Radu Ciocoveanu Lehrstuhl für Technische Elektronik (LTE) Robert Weigel Lehrstuhl für Technische Elektronik (LTE) Amelie Marietta Hagelauer Lehrstuhl für Technische Elektronik (LTE)

Involved external institutions

Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Ciocoveanu, R., Weigel, R., Hagelauer, A.M., & Issakov, V. (2019). A 20.7% PAE 3-Stage 60 GHz Power Amplifier for Radar Applications in 28 nm Bulk CMOS. In 2019 14th European Microwave Integrated Circuits Conference (EuMIC). Paris, FR.

MLA:

Ciocoveanu, Radu, et al. "A 20.7% PAE 3-Stage 60 GHz Power Amplifier for Radar Applications in 28 nm Bulk CMOS." Proceedings of the 14th European Microwave Integrated Circuits Conference (EuMIC), Paris 2019.

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