Low-voltage organic thin-film transistors with large transconductance
Klauk H, Zschieschang U, Halik M (2007)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2007
Journal
Book Volume: 102
Article Number: 074514
Journal Issue: 7
URI: https://aip.scitation.org/doi/10.1063/1.2794702
DOI: 10.1063/1.2794702
Abstract
We have developed an organic thin-film transistor (TFT) technology that aims at providing a good balance of static and dynamic performance parameters. An inverted staggered (bottom-gate, top-contact) device structure with patterned metal gates, a room-temperature-deposited gate dielectric providing a capacitance of 0.7μF∕cm2" role="presentation">0.7μF/cm2, and vacuum-deposited pentacene as the semiconductor were employed. The TFTs have a channel length of 10μm" role="presentation">10μm, a carrier mobility of 0.4cm2∕Vs" role="presentation">0.4cm2/Vs, an on/off current ratio of 107" role="presentation">107, a subthreshold swing of 100mV" role="presentation">100mV/decade, and a transconductance per channel width of 40μS∕mm" role="presentation">40μS∕mm. Ring oscillators operate with supply voltages as low as 2V" role="presentation">2V and with signal propagation delays as low as 200μs" role="presentation">200μs per stage.
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Germany (DE)How to cite
APA:
Klauk, H., Zschieschang, U., & Halik, M. (2007). Low-voltage organic thin-film transistors with large transconductance. Journal of Applied Physics, 102(7). https://dx.doi.org/10.1063/1.2794702
MLA:
Klauk, Hagen, Ute Zschieschang, and Marcus Halik. "Low-voltage organic thin-film transistors with large transconductance." Journal of Applied Physics 102.7 (2007).
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