Influence of photoresist pattern on charging damage during high current ion implantation

Dirnecker T, Ruf A, Frey L, Beyer A, Bauer A, Henke D, Ryssel H (2002)

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2002

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 106-109

Article Number: 1042620

ISBN: 0965157776

DOI: 10.1109/PPID.2002.1042620

Authors with CRIS profile

Tobias Dirnecker Lehrstuhl für Elektronische Bauelemente Lothar Frey Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät

Involved external institutions

Infineon Technologies Dresden GmbH & Co. KG DE Germany (DE) Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Dirnecker, T., Ruf, A., Frey, L., Beyer, A., Bauer, A., Henke, D., & Ryssel, H. (2002). Influence of photoresist pattern on charging damage during high current ion implantation. In Proceedings of the 7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002 (pp. 106-109). Institute of Electrical and Electronics Engineers Inc..

MLA:

Dirnecker, Tobias, et al. "Influence of photoresist pattern on charging damage during high current ion implantation." Proceedings of the 7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002 Institute of Electrical and Electronics Engineers Inc., 2002. 106-109.

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