Maultzsch J (2001)
Publication Status: Published
Publication Type: Journal article
Publication year: 2001
Publisher: AMER PHYSICAL SOC
Book Volume: 63
Article Number: ARTN 033306
Journal Issue: 3
We studied the resonant Raman intensity of GaAs optical phonons when the laser energy is tuned to the optical transition of an InAs monolayer embedded in the bulklike GaAs. The GaAs longitudinal-optical modes interact with heavy and light holes of the InAs via elastic scattering followed by Frohlich interaction. The redshift of the Raman profile compared to photoluminescence excitation measurements and the vanishing of the GaAs resonance around 30 K are explained by the homogeneous exciton Linewidth in the InAs monolayer.
APA:
Maultzsch, J. (2001). Resonant Raman scattering in GaAs induced by an embedded InAs monolayer. Physical Review B, 63(3).
MLA:
Maultzsch, Janina. "Resonant Raman scattering in GaAs induced by an embedded InAs monolayer." Physical Review B 63.3 (2001).
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