Distortion of sims profiles due to ion beam mixing: Shallow arsenic implants in silicon

Montandon C, Bourenkov A, Frey L, Pichler P, Biersack JP (1998)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1998

Journal

Radiation Effects and Defects in Solids Taylor & Francis: STM, Behavioural Science and Public Health Titles / Taylor & Francis

Publisher: Taylor and Francis Ltd.

Book Volume: 145

Pages Range: 213-223

Journal Issue: 3

DOI: 10.1080/10420159808225765

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Peter Pichler Technische Fakultät

How to cite

APA:

Montandon, C., Bourenkov, A., Frey, L., Pichler, P., & Biersack, J.P. (1998). Distortion of sims profiles due to ion beam mixing: Shallow arsenic implants in silicon. Radiation Effects and Defects in Solids, 145(3), 213-223. https://dx.doi.org/10.1080/10420159808225765

MLA:

Montandon, C., et al. "Distortion of sims profiles due to ion beam mixing: Shallow arsenic implants in silicon." Radiation Effects and Defects in Solids 145.3 (1998): 213-223.

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