Investigation of the effect of altered defect structure produced by photon assisted implantation on the diffusion of As in silicon during thermal annealing

Biró L, Gyulai J, Bogen S, Frey L, Ryssel H (1994)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1994

Journal

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Elsevier

Book Volume: 85

Pages Range: 925-928

DOI: 10.1016/0168-583X(94)95952-8

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät

How to cite

APA:

Biró, L., Gyulai, J., Bogen, S., Frey, L., & Ryssel, H. (1994). Investigation of the effect of altered defect structure produced by photon assisted implantation on the diffusion of As in silicon during thermal annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 85, 925-928. https://doi.org/10.1016/0168-583X(94)95952-8

MLA:

Biró, L., et al. "Investigation of the effect of altered defect structure produced by photon assisted implantation on the diffusion of As in silicon during thermal annealing." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 85 (1994): 925-928.

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