Friction and Dissipation in Epitaxial Graphene Films

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autorinnen und Autoren: Filleter T, Mcchesney JL, Bostwick A, Rotenberg E, Emtsev KV, Seyller T, Horn K, Bennewitz R
Zeitschrift: Physical Review Letters
Jahr der Veröffentlichung: 2009
Band: 102
Heftnummer: 8
ISSN: 0031-9007


Abstract

We have studied friction and dissipation in single and bilayer graphene films grown epitaxially on SiC. The friction on SiC is greatly reduced by a single layer of graphene and reduced by another factor of 2 on bilayer graphene. The friction contrast between single and bilayer graphene arises from a dramatic difference in electron-phonon coupling, which we discovered by means of angle-resolved photoemission spectroscopy. Bilayer graphene as a lubricant outperforms even graphite due to reduced adhesion.


FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Seyller, Thomas PD Dr.
Lehrstuhl für Laserphysik


Zusätzliche Organisationseinheit(en)
Exzellenz-Cluster Engineering of Advanced Materials


Einrichtungen weiterer Autorinnen und Autoren

McGill University
University of California, Berkeley


Forschungsbereiche

D Catalytic Materials
Exzellenz-Cluster Engineering of Advanced Materials


Zitierweisen

APA:
Filleter, T., Mcchesney, J.L., Bostwick, A., Rotenberg, E., Emtsev, K.V., Seyller, T.,... Bennewitz, R. (2009). Friction and Dissipation in Epitaxial Graphene Films. Physical Review Letters, 102(8). https://dx.doi.org/10.1103/PhysRevLett.102.086102

MLA:
Filleter, Tobin, et al. "Friction and Dissipation in Epitaxial Graphene Films." Physical Review Letters 102.8 (2009).

BibTeX: 

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